The Effects of Annealing Temperature on TiO2/ZnO Bilayer Thin Film Using Sol-gel Spin Coating Technique.
TiO2and ZnO have excellent properties and have similar band gap energy. The drawbacks experienced by TiO2 is plausible to overcame by layering these two nano-semiconductor to amplify the photocatalytic efficiency and may increase the conductivity of the composite and homogenous, well spread particles and have high surface area morphology. The structural, morphological and optical properties of TiO2/ZnO bilayer thin film at 400, 500 and 600℃ annealing temperature has been observed. TiO2/ZnO bilayer thin film has been deposited on fluorine-doped tin oxide (FTO) substrate by using sol-gel spin coating technique with spin speed of 3000rpm. TiO2/ZnO bilayer thin film has been successfully fabricated on fluorine-doped tin oxide (FTO) substrate using sol-gel spin coating technique. In this research, annealing of FTO/ TiO2 layer thin film is set at 600℃. It is found in this study that 500℃ is the most suitable temperature to anneal TiO2/ZnO bilayer thin film to produce the best structural, morphological and optical properties.